Plasma Enhanced Chemical Vapor Deposition (PECVD) is a highly efficient method for depositing thin films by introducing reactive gases into a plasma state. This process generates active radicals and ions, facilitating chemical reactions on the target substrate to form the desired film. A key advantage of PECVD is its ability to operate at lower temperatures compared to thermal CVD, making it suitable for temperature-sensitive applications.
Anode PECVD is widely used in semiconductor manufacturing to deposit silicon nitride (SiN) as a passivation layer and silicon oxide (SiO₂) as an interlayer insulating film. These films are integral to the fabrication of both compound and silicon-based semiconductors, providing reliable performance and enhanced device stability in a variety of applications.
SiH4-SiNx deposition
SiH4-SiNx deposition using Samco’s Anode-Coupled PECVD systems provides a reliable solution for forming silicon nitride films with excellent uniformity, low stress, and high optical quality. This process supports a wide range of applications, including dielectric layers, passivation films, and hard masks in device fabrication.
With precise control over deposition parameters, SiH4-SiNx films can achieve tailored properties such as high mechanical strength, low leakage current, and optimal refractive indices. The process is ideal for both R&D and production environments, delivering stable, reproducible results across diverse applications.
Excellent step coverage is achieved in SiN deposition as a passivation film for reverse mesa shapes.
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Stable film formation, with no change in stress over extended periods.
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Linear control of film stress, with no stress change after annealing and a wide process window.