Samco Presents SiO₂ ALE Etch Stabilization Research at ALD/ALE 2026
Samco Inc. will present a poster on SiO₂ quasi-ALE etch rate stability using O₂ plasma at ALD/ALE 2026 in Tampa,…
We are Samco Inc.
Established in 1979, Samco began as a garage start-up in Kyoto, aiming to provide cutting-edge semiconductor device and electronic component manufacturing systems globally. Over time, we have evolved into a leading global corporation with state-of-the-art technological capabilities and a widespread international presence. Our commitment to growth prioritizes “thin-film technology” as our core expertise.
Matthew – Supporting customers across the U.S.
Meet Matthew Alexander, Program Manager at Samco’s U.S. branch, and learn about his career journey, team culture, and work supporting…
DTU Nanolab Expands Silicon DRIE Infrastructure with Etch System
DTU Nanolab, Denmark’s national nanofabrication facility, will expand its silicon DRIE infrastructure with Samco’s cassette-loading RIE-800iPBC system to support advanced…
Tohoku University: Professor Mikihiko Oogane
Professor Mikihiko Oogane discusses TMR sensors, quantum spintronics, and brain–information interfaces in magnetic sensing research at Tohoku University.
Introduction to the Dual-Chamber ALD System AD-8002LPC
Samco’s AD-8002LPC dual-chamber ALD system enables stable TiOx deposition, reduced takt time, and flexible thermal and plasma ALD processing.
University of Central Arkansas Students Visit Samco Production Facility
UCA students visit Samco to learn about semiconductors, plasma processing, Japanese business, and Samco’s founding story.
Samco Presents ALE Technologies at OneNano Mid-Atlantic Meeting
Samco presented ALE technologies at OneNano’s Spring Meredith Meeting, highlighting plasma-assisted etching for GaN HEMTs, diamond, and nanoscale devices.
Samco to Exhibit at CS MANTECH 2026 in Portland
Samco Inc. will exhibit at CS MANTECH 2026, taking place from May 18–21, 2026, at the Portland Marriott Downtown Waterfront…
Visiting Samco’s Partner Companies
New employees visited Taisei Weld and Ushikoshi to learn how precision welding and metal fabrication support Samco’s semiconductor systems.
Research Focused Systems
Featured Solutions
Gallium Nitride (GaN) Etching
GaN is a III-V compound semiconductor material which has wide band gap and high electron mobility. Applications include Vertical Power Devices, HB LEDs, and more.
Indium Phosphide (InP) Etching
InP is a compound semiconductor material of III-V group. This material has a wide band gap and a high electron mobility.
Gallium Arsenide (GaAs) Etching
GaAs is a III–V compound direct-gap semiconductor used for applications including optoelectronics and radio-frequency (RF) devices.
Atomic Layer Etching (ALE)
ALE enables atomic-scale precision for controlled material removal, ensuring uniformity and selectivity in advanced semiconductor fabrication.
SiO2 deposition
SiO2 properties include excellent abrasion resistance, good electrical insulation, low thermal expansion and high thermal stability, making it ideal for a wide range of applications.
SiNx deposition
SiNx properties include low moisture and oxygen permeation, good electrical insulation and low thermal expansion. This material is used in a variety of applications in device fabrication.
Silicon Deep Reactive Ion Etching (DRIE)
The Bosch Process enables deep silicon etching process solutions with high aspect ratio etching and excellent selectivity, ideal for MEMS and packaging applications.
Atomic Layer Deposition (ALD)
ALD delivers uniform, pinhole-free films with precise thickness control, making it ideal for high-aspect-ratio and complex device structures.
We deliver cutting-edge process equipment designed for precise film deposition, high-performance etching, and efficient surface cleaning. Our solutions cater to both R&D and production needs across diverse applications, including compound semiconductors, quantum computing, optoelectronics, MEMS, microfluidics, power devices, RF devices, and more.
