Northwestern University – NUFAB: Nasir Basit, PhD.
Micro- and nanoscale device research, deposition and etching processes using RIE and PECVD for advanced structures.
Part 4 – Loading Effect and Microloading Effect in Silicon Deep Reactive Ion Etching
Bosch Process Tutorial: Part 4. Loading and Microloading Effects in Si DRIE The loading effect and the microloading effect are common phenomena observed not only in deep Si etching but also in conventional Reactive Ion Etching (RIE), and are a barrier to achieving a depth uniformity in etching processes. These two effects strongly appear in…
Part 3 – Equipment Advances for the Bosch Process
Bosch Process Tutorial: Part 3. Equipment Advances for the Bosch Process In this article, we introduce the hardware employed to fully utilize the capabilities of the Bosch process for deep etching of silicon. The equipment used for the Bosch process has many significant features that differentiate it from typical ICP etching tools. Inductively Coupled Plasma…
Part 2 – What is the Bosch Process (Deep Reactive Ion Etching)?
Bosch Process Tutorial: Part 2. What is the Bosch Process? Figure 1. The Principles of the Bosch Process Deep reactive ion etching (DRIE) of silicon to create high aspect ratio microstructures is one of the key processes in the advanced MEMS field and through silicon via (TSV) applications. However, conventional plasma etching processes are designed…
Part 1 – Introduction to Si DRIE (Silicon Deep Reactive Ion Etching)
Bosch Process Tutorial: Part 1. Intro to Si DRIE Silicon is most well-known as a semiconductor material, but because of its high mechanical strength and ease of processing, it is also commonly used in a wide variety of devices such as MEMS, optical components, micro-channel devices, and packaging. There are many methods for processing silicon,…