Dual chamber system for production
The RIE-802iPC high-density plasma etching system uses an inductively coupled plasma as the discharge form. This system is equipped with a vacuum cassette chamber and two reaction chambers for full-scale production system with excellent process repeatability and stability.
Key Features & Benefits
New ICP Source “HSTC™: Hyper Symmetrical Tornado Coil
High RF power (2 kW or more) can be applied efficiently and stably, and good uniformity is achieved.High Flow Exhaust System
The exhaust system directly connected to the reaction chamber enables a wide range of process windows from small flow and low pressure ranges to large flow and high pressure ranges.Lower Electrode Lifting Mechanism
The distance between the wafer and the plasma is optimized to ensure good in-plane uniformity.Easy-maintenance design
The TMP (turbomolecular pump) are integrated into the unit for easy replacement.
Applications
- High-precision processing of compound semiconductors such as GaN, GaAs, InP, etc.
- High-speed processing of SiC and SiO₂
- Etching of ferroelectrics (PZT, BST, SBT, SBT), electrode materials (Pt, Au, Ru, Al) and other difficult-to-etch materials
- Plasma dicing and thinning of compound semiconductor wafers
