Precise depth control
The RIE-400iP Atomic Layer Etching (ALE) system is an advanced and versatile tool designed for precise and controlled etching processes at the atomic scale. Equipped with cutting-edge technology, the RIE-400iP ALE enables researchers and engineers to achieve atomic-level precision in etching various materials. The system employs the Atomic Layer Etching method, ensuring highly uniform and reproducible results.
Key Features & Benefits
- Robust, Fast-Switching Gas Input Valve: Ensures stable and reliable performance for ALD and ALE processes.
- New ICP Source HSTC™ (Hyper Symmetrical Tornado Coil): Efficiently applies high RF power (2 kW or more) for excellent stability and uniformity.
- High Flow Exhaust: Directly connected to the reaction chamber, supporting a wide process window from low flow/pressure to high flow/pressure.
- Endpoint Monitoring: Compatible with interferometric and emission spectroscopic methods for precise film thickness detection.
- Easy-to-Maintain Design: Integrated TMP and high-frequency power supply allow for straightforward replacement and maintenance.
Applications
Options
Papers
Development of Atomic Layer Etching (ALEt) for GaN-based materials
Congying You, C. Mannequin, G. Jacopin, T. Chevolleau, C. Durand, et al.. Development of Atomic Layer Etching (ALEt) for GaN-based materials. International Workshop on Nitride Semiconductors, Nov 2018, Kanazawa, Japan. hal-02008012
Comparative study of two atomic layer etching processes for GaN
Cédric Mannequin, Christophe Vallée, Katsuhiro Akimoto, Thierry Chevolleau, Christophe Durand, et al.. Comparative study of two atomic layer etching processes for GaN. Journal of Vacuum Science & Technology A, 2020, 38 (3), pp.032602. ff10.1116/1.5134130. hal-02917577
