⌀220 mm
Load Lock
ALD
none
The AD-800LP is a cutting-edge ALD (Atomic Layer Deposition) system that delivers precise atomic-level control over film thickness. By alternately introducing organometallic precursors and oxidants into the reaction chamber, it ensures deposition exclusively through surface reactions. Equipped with a proprietary ICP Tornado Plasma source, the system maintains stable plasma generation even at high pressures. Perfect for depositing high-quality oxide, nitride, and conductive films, the AD-800LP is designed to meet the demands of advanced semiconductor manufacturing.
Key Features & Benefits
- Enables precise uniform layer control at the atomic scale.
- Achieves conformal deposition even on high-aspect-ratio structures.
- Delivers exceptional in-plane uniformity and reproducibility for stable processing.
- Features a unique reaction chamber design that optimizes gas flow to minimize particle generation.
- Utilizes a capacitively coupled plasma (CCP) system to reduce chamber volume, accelerate gas purging, and enhance cycle efficiency.
Applications
- Formation of nitride film (AlN, SiN) and low-temperature formation of oxide film (AlOx, SiO2)
- Gate insulators for electronic devices
- Passivation film for semiconductors, organic EL, etc.
- Reflective surface of semiconductor laser
- Deposition on 3D structures such as MEMS
- Deposition on graphene
- Coating of protective film powder of carbon nanotubes
