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Integrating SWCNTs with MEMS technology
MEMS structures were fabricated using the Bosch Process to integrate field-effect transistor (FET) with single-walled carbon nanotubes (SWCNTs).
Terminals (source, drain and gate) were separated with sub-micron gaps by the anisotropic etch process.
Photo courtesy of Tabata/Tsuchiya Lab, Kyoto University.