High-Aspect-Ratio forward taper etching on 8-inch wafers
This forward taper etching achieves a 400 μm depth with a 15 μm hole diameter on an 8-inch wafer while maintaining excellent profile quality. Deep reactive ion etching (DRIE) at this scale often faces challenges such as side etching due to bowing profiles and the erosion of sidewall passivation films. By optimizing process parameters, we have successfully minimized these issues, achieving high-aspect-ratio etching with superior profile control.
- Taper Profile: Forward taper
- Selectivity: 40
- Aspect Ratio: 27
- Depth: 400 μm
- Tilt: 90° ± 0.3° @ 8-inch wafer
- No Bowing