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High-speed DRIE with the Bosch process
Samco’s advanced DRIE system, RIE-400iPB, enables high-rate etching at 18 μm/min while maintaining precise profile control. By optimizing selectivity with a resist mask, we achieved a pattern width of 50 μm and a depth of 128 μm using the Bosch process. This method allows for efficient and cost-effective deep silicon etching, making it suitable for high-throughput applications.