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Achieving precise trenches with uniformity across ø6" wafers
Trench etching of SiO2 was performed using the RIE-10NR system, achieving an etch depth of 540 nm with a rate of 18 nm/min. The selectivity to the resist mask ranged from 0.8 to 1.0, maintaining the resist sidewall angle and preventing microtrenching. Time-controlled etching stops enabled precise etching of SiO2 with minimal impact on the underlying Si layer.
This process demonstrated excellent uniformity of ±1% across ø6″ Si wafers (excluding a 15 mm edge area), making it ideal for applications requiring consistent and reliable SiO2 trench etching.