Smooth sides and sub-trenchless shape
Samco’s advanced ICP etching system delivers precise trench gate processing for SiC MOSFETs, achieving smooth sidewalls and a sub-trenchless round shape. This highly controlled etching process ensures superior performance for SiC-based power devices.
- Etch depth: 2 μm
- Etch rate: >450 nm/min
- SiC/SiO2 selectivity: >5
- Uniformity (ø6 inch): <±3%
This process provides high uniformity and excellent material selectivity, making it ideal for high-quality, reliable SiC MOSFET fabrication.