Products
3.8 μm Deep GaAs Etch
This process demonstrates high-precision GaAs deep mesa etching optimized for microLED applications.
- Wafer Size: ø6-inch
- Etch Depth: 3.8 μm
- In-Plane Uniformity: <±5%
- Application: MicroLED fabrication
The etching process is tailored for the production of microLEDs, which require precise etch profiles to define device features. This deep etch achieves vertical sidewalls and smooth surfaces, crucial for maintaining optical efficiency and electrical performance in microLED devices. The uniformity of <±5% across the ø6-inch wafer supports high-yield manufacturing, essential for scaling up microLED technology for commercial applications.