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Deposition of 100 nm ALD-Al₂O₃ film in a 32:1 aspect ratio structure
The process demonstrates the capability of Atomic Layer Deposition (ALD) to uniformly coat high-aspect-ratio structures. A film of Al₂O₃ with a thickness of 100 nm was deposited across the entire surface of a 32:1 aspect ratio hole. The result showcases complete coverage, with the same 100 nm thickness achieved consistently on the top, sides, and bottom of the structure. This uniformity highlights the precision and conformality of ALD, making it an ideal solution for advanced semiconductor applications requiring high-quality thin films in complex geometries.