Samco DRIE systems provide reproducible process solutions of deep silicon etching. Also, PECVD systems and XeF2 etching systems are available for both R&D and production.
Deep Silicon Etching by the Bosch Process
Photoresist Ashing
Surface Cleaning before Packaging
XeF2 Etching for Free-standing Structure Release
Laser diode fabrication with compound semiconductors is one of Samco’s proprietary fields.
GaN/AlGaN/InGaN Epi Growth
Ridge Formation by Dry Etching
Passivation Film Deposition
Exposure of p-Contact Layer (SiO2 Etching)
Plasma Dicing
Reflective Layer Formation by PECVD
Samco has provided process solutions including Patterned Sapphire Substrate (PSS) fabrication
to major HB LED manufactures. Both single and batch wafer processing are available.
PSS Fabrication by Sapphire Etching
p-GaN/Active/n-GaN Layer Deposition by MOCVD
Expose n-GaN Layer by Dry Etching
Device Isolation by GaN Etching
Passivation Deposition by PECVD
Contact Hole Formation by SiO2 Etching
Plasma Dicing
TSV fabricated with Samco deep silicon etching and cathode low-temperature PECVD technologies will improve device performance.
Via Hole Fabrication using the Bosch Process
Photoresist Ashing
Insulation Film Deposition on Via Hole
Exposure of Lower Electrode by SiO2 Etching
Cu Plug Exposure by Dry Etching
Passivation Film Deposition by PECVD
Samco has provided process solutions to major industry-leading SAW device manufacturers.
Photoresist Patterning on Piezoelectric Substrate
Electrode Formation (Metal Etching)
Photoresist Removal
Piezoelectric Substrate Trimming by Dry Etching
Passivation Film Deposition
Contact Hole Formation by Dry Etching
Surface Cleaning before Wire Bonding
Samco offers process solutions of wide bandgap semiconductors including GaAs, GaN and InP
for RF device production in the field of telecommunication and defense applications.
Epi Growth
SiO2 Mask Fabrication for Ion Implantation
Recess Etching for HEMT fabrication
Contact Hole Formation by SiO2 Etching
Backside Via Hole Etching
Plasma Dicing for Higher Yields