Atomic Layer Deposition (ALD) is a technology to deposit thin films in atomic scale, and by using chemical reactions between sample surfaces and precursors through sequential, self-limiting surface reactions. Compared to conventional Plasma Enhanced Chemical Vapor Deposition (PECVD) technology, deposition rates of ALD processes are slower, but conformal thin film coating can be achieved on high aspect ratio trench and via hole structures with excellent uniformity. Furthermore, there is no physical and/or electrical damage that is associated with ion bombardment in PECVD processes. Also, various types of thin films (oxides, fluorides, nitrides, metals and more) can be deposited and film compositions can be tuned by using a variety of precursor materials.

ALD System Lineup

Thermal ALD System AL-1

Pin-hole free films deposition
⌀220 mm
Open Load
ALD
none

Plasma Enhanced ALD System AD-800LP

Versatile and stable deposition
⌀220 mm
Load Lock
ALD
none

Key Features & Benefits

  • Self-limiting layer-by-layer deposition
  • Conformal coating on high-aspect-ratio structures
  • Pin-hole and particle free
  • Wide range of precursor materials and processes

Schematic of ALD process flow

  • AIOx film deposition by using TMA (trimethylaluminum) and H₂O / O₂ plasma.
  • Repeating the cycle from A to D.
  • Only one atomic layer remains on the surface of the substrate after purging in step B (self-limiting).

Interested in something else?

Deposition
Etching
Surface Treatment