PECVD Systems
Utilized in the fabrication of compound semiconductors and silicon devices, Plasma Enhanced Chemical Vapor Deposition (PECVD) systems from SAMCO are meticulously designed for depositing insulation and passivation films. Our PECVD systems excel in depositing high-quality silicon-based thin films, including SiO2, Si3N4, SiOxNy, a-Si:H. SAMCO offers both Anode PECVD systems for high-quality thin film deposition and Cathode PECVD systems for high-rate deposition. Experience unmatched process and hardware performance with SAMCO’s advanced PECVD technology.
Multiple System Lineup for R&D and Production
Processes Up to 450 mm Wafers
Batch Processing With a Carrier
Low Plasma Damage
High Deposition Uniformity
Low Temperature Deposition
Excellent Step Coverage
Controllable Film Stress
High-speed Deposition
Controllable Wet Etch Rate
As semiconductor processing technologies evolve, the era of atomic-scale processing is coming to achieve high performance of devices. Samco ALD system is suitable for atomic-scale processing of various devices including next-generation power devices and nano-electronics. The system is capable of various material deposition with highly reproducilbe thickness control with a high aspect ratio.
Process up to Ø8″ Wafers
Chamber Heating up to 500°C
High-speed Gas Switching
Designed for Reduction of Precursor Consumption