Scalable Fabrication of Nanogratings on GaP for Efficient Diffraction of Near-Infrared Pulses and Enhanced Terahertz Generation by Optical Rectification

Mohammad Bashirpour¹, Wei Cui¹, Angela Gamouras^1,2 and Jean-Michel Ménard^1,2
1 Department of Physics, University of Ottawa, Ottawa, ON K1N 7N9, Canada
² National Research Council Canada, Ottawa, ON K1A 0R6, Canada
Crystals 2022, 12, 684. https://doi.org/10.3390/cryst12050684

Samco RIE system RIE-10NR was used for SiO2 hardmask patterning using photoresist mask. Then, Samco ICP-RIE system was used for GaP etching using the SiO2 hardmask for wafer-scale fabrication of a surface phase grating with submicron feature sizes.

Dry and wet etching for β-Ga2O3 Schottky barrier diodes with mesa termination

Hironori Okumura¹ and Taketoshi Tanaka^2
1 Faculty of Pure and Applied Science, University of Tsukuba, Tsukuba 305-8573, Japan
² Rohm Co. Ltd., Kyoto 615-8585, Japan
Japanese Journal of Applied Physics, 58, 120902 (2019)

Ga2O3 is a compound semiconductor material with a large band-gap energy. Research on this material is still early stage, but more researchers are getting interested in unique material properties.  Dry etching and wet etching of β-Ga2O3 was studied in this paper. Samco ICP-RIE system RIE-400iP was used for mesa structure fabrication in ICP etching of chlorine chemistry.

Profile control of compound semiconductor materials is one of our strong points in material processing. We have accumulated process knowledge on GaN, GaAs, InP, Ga2O3, etc.
If you would like to see some process data, please visit the following webpage.
Process Data by Materials

Formation of distinctive structures of GaN by inductively-coupled-plasma and reactive ion etching under optimized chemical etching conditions

N. Okada¹, K. Nojima¹, N. Ishibashi¹, K. Nagatoshi¹, N. Itagaki¹, R. Inomoto¹, S. Motoyama², T. Kobayashi², and K. Tadatomo^1
1Yamaguchi University, 2-16-1 Tokiwadai, Ube, Yamaguchi 755-8611, Japan
²R&D Department, SAMCO Inc., 36 Takeda Waraya-cho, Fushimi-ku, Kyoto 612-8443, Japan

Gallium Nitride (GaN) is a popular nitride material due to its unique material properties such as wide bandgap and high breakdown voltage. The material is commercially used for various applications such as LEDs , RF devices, HEMTs and LDs. In this paper, optimized conditions of GaN plasma etching was investigated in chlorine chemistry. GaN etch profile, etch rate and etch selectivity over SiN hard mask were investigated in several process conditions using Samco ICP-RIE System, RIE-230iPC. For deposition of SiN hard mask layers, Samco PECVD Tool, PD-220NL was used.

This research paper is collaboration between Yamaguchi University and Samco. We have cooperated with Yamaguchi University for process development of GaN etching and PECVD technologies to achieve technical breakthrough in nitride semiconductor based device research.

For more details of our GaN plasma etching technologies and capabilities, please visit the GaN etching process data page below.
GaN Etching using ICP-RIE

Superior characteristics of microscale light emitting diodes through tightly lateral oxide-confined scheme

Shen-Che Huang¹, Heng Li¹ Zhe-Han Zhang¹ Hsiang Chen² Shing-Chung Wang¹ and Tien-Chang Lu^1
1 Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta-Hsueh Rd., Hsinchu 30010, Taiwan
² Department of Applied Materials and Optoelectronic Engineering, National Chi Nan University, 1 Ta-Hsueh Rd., Puli 54561, Taiwan
Appl. Phys. Lett. 110, 021108 (2017); doi: 10.1063/1.4973966

Micro-LED devices with oxide-refilled current apertures of different sizes were fabricated on sapphire substrates. Samco ICP-RIE etcher was used for aperture pattern transfer by GaN plasma etching with etching depth control.

Samco has dedicated to academic and industry customers for both research and production of LED devices by providing equipment and process technologies of plasma etching and PECVD. For more details on our process solutions for LED manufacturing, please visit the process solutions page below.
Patterned Sapphire Substrate & GaN Etch for HB LEDs

Also, our latest technical report be found here.
GaN Etching for MiniLED and MicroLED Applications

Surface photovoltage studies of p-type AlGaN layers after reactive-ion etching

J. D. McNamara ¹, K. L. Phumisithikul ¹, A. A. Baski1, J. Marini ², F. Shahedipour-Sandvik ², S. Das ³ and M. A. Reshchikov ^1
1 Physics Department, Virginia Commonwealth University, Richmond, Virginia 23284, USA
² Colleges of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Albany, New York 12203, USA
³ Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, Virginia 23284, USA
J. Appl. Phys. 120, 155304 (2016)

Nanometer-scale plasma etching of Mg-doped, p-type Al_xGa_1−xN was performed to remove defective surface region, using Samco ICP-RIE etch system at Virginia Commonwealth University. With plasma etching process with chlorine chemistry, surface defects were successfully removed.

Virginia Commonwealth University is one of Samco’s proprietary customers using our systems for AlGaN & GaN plasma etching in AlGaN/GaN device research.
For more details of our plasma etching technologies of GaN, please visit the process data page below.
GaN Plasma Etching Process Data
Also, for more details of our ICP-RIE etch systems, please visit the product page below.
ICP-RIE Etch Systems

Piezoelectric effect on compensation of the quantum-confined Stark effect in InGaN/GaN multiple quantum wells based green light-emitting diodes

Sheng-Chieh Tsai^{a, b}, Cheng-Hsueh Lu^b and Chuan-Pu Liu^a
a Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan
^b Research Center, Genesis Photonics Incorporation, Tainan 74144, Taiwan
Nano Energy (2016)

Samco ICP etch system was used for InGaN plasma etching in quantum well structure fabrication.

Samco has plasma etching process knowledge of III-V compound semiconductor materials including GaN, GaAs, InP and more. Please visit our process data page for more details of our process capabilities.

Process Data by Materials

Phase-modulating lasers toward on-chip integration

Yoshitaka Kurosaka, Kazuyoshi Hirose, Takahiro Sugiyama, Yu Takiguchi & Yoshiro Nomoto
Central Research Laboratory, Hamamatsu Photonics K.K., Shizuoka 434-8601, Japan.
Scientific Reports 6, Article number: 30138 (2016)
doi:10.1038/srep30138

Samco Load-lock ICP-RIE System was used for GaAs-based hole array fabrication in dry etching for phase-modulating laser fabrication.

For our process examples and capabilities of GaAs plasma etching, please visit the process data page below.
GaAs Plasma Etching Process (ICP-RIE)

Chlorine-based inductively coupled plasma etching of GaAs wafer using tripodal paraffinic triptycene as an etching resist mask

Akihiro Matsutani¹, Fumitaka Ishiwari², Yoshiaki Shoji², Takashi Kajitani², Takuya Uehara³, Masaru Nakagawa³, and Takanori Fukushima^2
1 Division of Microprocessing Technology Platform, Technical Department, Tokyo Institute of Technology, Yokohama 226-8503, Japan
² Laboratory for Chemistry and Life Science, Institute of Innovative Research, Tokyo Institute of Technology, Yokohama 226-8503, Japan
³ IMRAM, Tohoku University, Sendai 980-8577, Japan
Japanese Journal of Applied Physics (2016) Volume 55, Number 6S1

Samco ICP etch system was used for GaAs plasma etching over tripodal paraffinic triptycene (TripC₁₂) mask.
Based on chlorine gas plasma chemistry, vertical and smooth GaAs profile was achieved.

For our process capabilities of GaAs plasma etching, please visit the process data page below.
GaAs Dry Etching Process (ICP-RIE)

Improving the Brightness and Reliability of InGaN/GaN Near Ultraviolet Light Emitting Diodes by Controlling the Morphology of the GaN Buffer Layer

S. C. Tsai, H. C. Fang, C. H. Lu and Y. L. Lai
National Cheng Kung University, Tainan, Taiwan
Journal of Display Technology (2016) (Volume:PP , Issue: 99 )

Samco ICP etch system at National Cheng Kung University was used for InGaN/GaN dry etching in UV LED fabrication.
For our process capabilities of GaN dry etching, please visit the process data page below.
GaN Dry Etching Process (RIE or ICP-RIE)

Fabrication of artificial graphene in a GaAs quantum heterostructure

Diego Scarabelli, Sheng Wang, Aron Pinczuk, and Shalom J. Wind
Department of Applied Physics and Applied Mathematics, Columbia University, 500 W. 120th St., Mudd 200, MC 4701, New York, New York 10027
Yuliya Y. Kuznetsova
Department of Physics, Columbia University, 538 W. 120th St., 704 Pupin Hall MC 5255, New York, New York 10027
Loren N. Pfeiffer and Ken West
Department of Electrical Engineering, Princeton University, Olden Street, Princeton, New Jersey 08544
Geoff C. Gardner and Michael J. Manfra
Department of Physics and Astronomy, and School of Materials Engineering, and School of Electrical and Computer Engineering, Purdue University, 525 Northwestern Avenue, West Lafayette, Indiana 47907
Vittorio Pellegrini
Graphene Labs, Istituto Italiano di Tecnologia, Via Morego 30, I-16163 Genova, Italy and NEST,
Istituto Nanoscienze-CNR and Scuola Normale Superiore, Piazza San Silvestro 12, I-56127 Pisa, Italy
Journal of Vacuum Science & Technology B 33, 06FG03 (2015); doi: 10.1116/1.4932672

SAMCO ICP Etch System at Princeton University was used for anisotropic plasma etching of GaAs/AlGaAs to fabricate vertical quantum hetero-structures.

For our process capabilities of GaAs dry etching, please visit the process data page below.
GaAs Dry Etching Process (ICP-RIE)