Samco’s proprietary Cathode Plasma Enhanced Chemical Vapor Deposition (PECVD) systems utilize self-bias techniques to maximize ion acceleration toward the cathode, where samples are placed directly. This approach enables high deposition rates and thicker film capabilities compared to anode PECVD, especially for SiO2 films, using TEOS as a safer alternative to silane (SiH4). Operating at temperatures as low as 80°C, these systems are ideal for temperature-sensitive applications, achieving high-quality film deposition from thin layers to 100 µm at rates exceeding 300 nm/min.
A variety of Cathode PECVD systems are available, depending on customer requirements. System lineup includes load lock type for R&D and cassette loading types for production uses.
Cathode PECVD System Lineup
Cathode-Coupled PECVD: High-Speed Deposition for Durable Layers
In our PECVD (Plasma Enhanced Chemical Vapor Deposition) systems, two configurations cater to different device requirements: anode-coupled PECVD and cathode-coupled PECVD.
In Samco’s proprietary cathode-coupled PECVD system, RF power is applied directly to the substrate on the cathode electrode. This unique configuration utilizes a self-bias electric field to accelerate ions towards the substrate, resulting in high deposition rates and enhanced durability. The cathode PECVD setup is especially suited for applications requiring thick, uniform oxide layers—ideal for advanced microelectronics, lightwave circuits, and metal line gap-filling.
Samco’s cathode PECVD systems are optimized for both high-speed and low-temperature deposition, offering excellent step coverage, film stress control, and film hardness. Our systems also operate with safer alternatives to traditional silane (SiH₄), ensuring both efficiency and adherence to environmental and safety standards.
Our cathode PECVD technology provides flexible solutions for demanding applications, enabling rapid, high-quality film deposition with superior durability.