Northwestern University – NUFAB: Nasir Basit, PhD.
Micro- and nanoscale device research, deposition and etching processes using RIE and PECVD for advanced structures.
ICP Etching Process for Realizing SiC Trench MOSFETs
Introduction One example of a 4H-SiC power device is the MOSFET (Metal Oxide Semiconductor Field Effect Transistor). While planar MOSFETs have been developed in the past, trench-type MOSFETs have attracted attention to meet demands for high efficiency, such as “low on-resistance.” Samco has been working on trench processing using ICP etching equipment, which is essential…
National Institute of Advanced Industrial Science and Technology (AIST): Takahiro Mori Ph.D.
Research on silicon spin qubits for quantum computing, using PD-2201LC, RIE-400iPC, and RIE-230LC.
UV-Ozone Cleaning: Fundamentals, Advantages, and Applications
UV Ozone Cleaning UV Ozone cleaning is a widely used method for preparing and cleaning surfaces in material research and device fabrication. As an alternative to oxygen plasma cleaning, it relies on a unique photochemical reaction to clean and modify surfaces with precision and efficiency. This page explains the fundamentals, advantages, and applications of UV…
Part 4 – Loading Effect and Microloading Effect in Silicon Deep Reactive Ion Etching
Bosch Process Tutorial: Part 4. Loading and Microloading Effects in Si DRIE The loading effect and the microloading effect are common phenomena observed not only in deep Si etching but also in conventional Reactive Ion Etching (RIE), and are a barrier to achieving a depth uniformity in etching processes. These two effects strongly appear in…
Part 3 – Equipment Advances for the Bosch Process
Bosch Process Tutorial: Part 3. Equipment Advances for the Bosch Process In this article, we introduce the hardware employed to fully utilize the capabilities of the Bosch process for deep etching of silicon. The equipment used for the Bosch process has many significant features that differentiate it from typical ICP etching tools. Inductively Coupled Plasma…
Part 2 – What is the Bosch Process (Deep Reactive Ion Etching)?
Bosch Process Tutorial: Part 2. What is the Bosch Process? Figure 1. The Principles of the Bosch Process Deep reactive ion etching (DRIE) of silicon to create high aspect ratio microstructures is one of the key processes in the advanced MEMS field and through silicon via (TSV) applications. However, conventional plasma etching processes are designed…
Part 1 – Introduction to Si DRIE (Silicon Deep Reactive Ion Etching)
Bosch Process Tutorial: Part 1. Intro to Si DRIE Silicon is most well-known as a semiconductor material, but because of its high mechanical strength and ease of processing, it is also commonly used in a wide variety of devices such as MEMS, optical components, micro-channel devices, and packaging. There are many methods for processing silicon,…
Surface Treatment of Gold Using Aqua Plasma®
Discover the innovative Aqua Plasma® technology that transforms gold surface treatment in semiconductor manufacturing. This approach prevents oxidation and enhances the hydrophilicity of gold surfaces, making it versatile for various applications. Our study shows how Aqua Plasma® reduces gold oxides and improves bonding, ensuring optimal performance in critical processes. Explore the benefits of Aqua Plasma® and its potential to enhance your manufacturing practices. Contact our team for more information or to arrange a demonstration with our production-scale equipment!
ICFO: Dr. Johann Osmond
Nanophotonics research, advanced applications, and the role of RIE-10NR in ICFO’s photonics projects.