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Notch-free SOI Etching
A 15 µm thick silicon layer on a silicon-on-glass (SOG) substrate was etched using the Bosch Process.
The standard Bosch Process causes undesirable notching at the silicon/insulation interface due to electrical charging. Samco offers a notch-free SOI etching process that maintains the etch selectivity by using superimposed Radio Frequency (RF) power. The process minimized the notching on the SOG substrate.
Photo courtesy of Tabata/Tsuchiya Lab, Kyoto University.