XeF2 Etching System VPE-4F
XeF2 Etching System VPE-4F
⌀4″
Open Load
none
none

Compact benchtop system

The VPE-4F is an XeF₂ etching system tailored for etching silicon sacrificial layers in MEMS (Micro-Electro-Mechanical Systems) fabrication. Its dry etching process eliminates stiction issues associated with wet processing, streamlining production by removing the need for pretreatment and post-processing. Designed for efficiency and space-saving, the VPE-4F offers a reliable solution in a compact, tabletop form factor.

Key Features & Benefits

  • Non-damaging dry process
    Operates without plasma, preventing device damage from electric fields caused by electron or ion impacts.
  • Precise etching rate control
    Intermittent gas flow enables easy adjustment of etching speed and optimized gas usage.
  • Compact and cost-effective
    Desktop design minimizes installation space while delivering high cost performance as a dedicated machine.

Applications

  • Etching of silicon sacrificial layers in MEMS fabrication.

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