⌀4″
Open Load
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Compact benchtop system
The VPE-4F is an XeF₂ etching system tailored for etching silicon sacrificial layers in MEMS (Micro-Electro-Mechanical Systems) fabrication. Its dry etching process eliminates stiction issues associated with wet processing, streamlining production by removing the need for pretreatment and post-processing. Designed for efficiency and space-saving, the VPE-4F offers a reliable solution in a compact, tabletop form factor.
Key Features & Benefits
- Non-damaging dry process
Operates without plasma, preventing device damage from electric fields caused by electron or ion impacts. - Precise etching rate control
Intermittent gas flow enables easy adjustment of etching speed and optimized gas usage. - Compact and cost-effective
Desktop design minimizes installation space while delivering high cost performance as a dedicated machine.
