Novel low-cost system for R&D
The RIE-400iPB is a load lock deep silicon etching system specifically designed for the Bosch Process, accommodating wafers up to 100 mm (4 inches). The system is equipped with a unique reaction chamber, a temperature-controlled electrode, and a high-flow exhaust system, all integrated into a compact, space-saving design. This design ensures reliable and exceptional process control, enabling high-rate, high-aspect, tilt-free etching with excellent selectivity. Additionally, the system can achieve high-rate SiO2 etching by substituting the ICP source.
Key Features & Benefits
Bosch Process Optimized ICPSource
- High rate Si etch (>14 µm/min)
- Leading PR:Si selectivity (up to 250:1)
- Etch up to 400 µm deep
BoschProcess Optimized RF and Gas Systems
- Stable and repeatable plasma discharge during gas switching
- Reduction of scallop size whilst maintaining etch rates
- Notch prevention technology for SOI etch
StableRepeatable Processing
- Chamber heating for improved process stability
- ESC for stable wafer temperatures throughout the process
High Performance SiO2 Etch (Option)
- Quick change to specialized SiO2 etch mode
- Up to 600 nm/min etching rates with minimal polymer formation
EasySystem Maintenance
Applications
- MEMS
- Accelerator
- Gyroscopes
- Pressure sensors
- Actuators
- Medical devices such as μTAS
Options
- SiO2 etch ICP unit
Processes
Papers
http://dx.doi.org/10.3390/proceedings1040394
