Northwestern University – NUFAB: Nasir Basit, PhD.
Micro- and nanoscale device research, deposition and etching processes using RIE and PECVD for advanced structures.
ICP Etching Process for Realizing SiC Trench MOSFETs
Introduction One example of a 4H-SiC power device is the MOSFET (Metal Oxide Semiconductor Field Effect Transistor). While planar MOSFETs have been developed in the past, trench-type MOSFETs have attracted attention to meet demands for high efficiency, such as “low on-resistance.” Samco has been working on trench processing using ICP etching equipment, which is essential…
National Institute of Advanced Industrial Science and Technology (AIST): Takahiro Mori Ph.D.
Research on silicon spin qubits for quantum computing, using PD-2201LC, RIE-400iPC, and RIE-230LC.