Samco Inc. (TSE: 6387) has announced plans to strengthen its collaboration with the Indian Institute of Technology Delhi (IIT Delhi) in early 2025. This expanded partnership will focus on technology exchange in energy science and talent development, including the recruitment of graduates from IIT Delhi’s master’s and doctoral programs. On February 10, 2025, Samco Inc.…
Introduction Since its founding, our company has been developing and designing equipment with superior environmental, health, and safety (EHS) features. In 2016, we launched the Aqua Plasma® cleaner, which utilizes water as its primary material, characterized by being safe and environmentally friendly. The product has been well received by many customers. The Aqua Plasma® process…
Kyoto, Japan – April 4, 2025 – Samco Inc. (TSE: 6387), was pleased to welcome a delegation of Executive MBA (EMBA) students from Cornell University’s SC Johnson College of Business as part of their “Leadership Course to Japan.” The visit provided a valuable opportunity for cross-cultural exchange and dialogue on innovation, technology, and global business…
Samco Inc. (TSE: 6387), was honored to host Dr. Tomás Palacios, Director of the Microsystems Technology Laboratories at MIT and Clarence J. LeBel Professor in Electrical Engineering and Computer Science, during his visit to discuss potential collaborations in research and development. His visit marks an exciting opportunity to explore advancements in microelectronics through innovative materials,…
Introduction Plasma-enhanced chemical vapor deposition (PECVD) systems were initially developed for low-temperature film deposition. However, recent diversification in research and development needs has led to a demand for systems capable of high-temperature film deposition. PECVD systems, a cornerstone of Samco, utilize silicon tetrahydride (SiH4) gas for silicon nitride (SiN) and silicon dioxide (SiO2) film deposition.…
Atomic Layer Deposition Tutorial: Introduction to ALD Atomic Layer Deposition (ALD) is a thin-film deposition technique that utilizes self-limiting surface chemical reactions to achieve precise layer-by-layer growth. By alternately introducing and exhausting two or more reactants into the reaction chamber, ALD enables excellent film thickness control, superior step coverage, and high conformality. As demand for…
Micro- and nanoscale device research, deposition and etching processes using RIE and PECVD for advanced structures.
Introduction One example of a 4H-SiC power device is the MOSFET (Metal Oxide Semiconductor Field Effect Transistor). While planar MOSFETs have been developed in the past, trench-type MOSFETs have attracted attention to meet demands for high efficiency, such as “low on-resistance.” Samco has been working on trench processing using ICP etching equipment, which is essential…
Research on silicon spin qubits for quantum computing, using PD-2201LC, RIE-400iPC, and RIE-230LC.