AlGaN/GaN Etch Challenges for GaN Power Device Fabrication
As one of the most promising materials in compound semiconductors, Gallium Nitride (GaN) demonstrates high electron mobility and a wide bandgap, enabling numerous next-generation applications. GaN-based devices, from High Brightness LEDs in consumer electronics to emerging power devices, are central to advancements in displays, lighting, and high-performance power systems. The unique AlGaN/GaN heterointerface generates a…