TOWA and Samco to Host “Kyoto Day” in New Delhi Ahead of SEMICON India 2025
Kyoto Day in New Delhi brings TOWA and Samco together to showcase semiconductor innovations ahead of SEMICON India 2025.
We are Samco Inc.
Established in 1979, Samco began as a garage start-up in Kyoto, aiming to provide cutting-edge semiconductor device and electronic component manufacturing systems globally. Over time, we have evolved into a leading global corporation with state-of-the-art technological capabilities and a widespread international presence. Our commitment to growth prioritizes “thin-film technology” as our core expertise.
Date
September 10, 2025
–
September 12, 2025
Location
Shenzhen World – Exhibition & Convention Center
Simultaneous Double-sided Wafer Deposition via Plasma Enhanced ALD
Report investigating simultaneous dual-surface deposition of AlOx films on silicon wafers using the Plasma Enhanced Atomic Layer Deposition (PEALD) technique.
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Institute of Science Tokyo: Professor Yasuyuki Miyamoto
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Special Lecture on GaN Technology by Nagoya University Professor Jun Suda
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Samco featured in TIME Magazine: Taking a Quantum Leap
We are pleased to share that Samco Inc. has been featured in TIME magazine. In the article “Taking a Quantum…
Indian Students from Kyoto University’s KU-STAR Program Visit Samco
Samco welcomed KU-STAR Program students from top Indian universities for a factory tour, tech talk, and cultural exchange during their…
Kyushu University – CSeDE: Professor Reiji Hattori
Professor Reiji Hattori Professor, Interdisciplinary Graduate School of Engineering Sciences, Kyushu University Director, Center for Semiconductor and Device Ecosystem Research…
Samco Strengthens Collaboration with IIT Delhi, Advancing Japan-India Technology and Talent Exchange
Samco Inc. (TSE: 6387) has announced plans to strengthen its collaboration with the Indian Institute of Technology Delhi (IIT Delhi)…
Featured Solutions
Gallium Nitride (GaN) Etching
GaN is a III-V compound semiconductor material which has wide band gap and high electron mobility. Applications include Vertical Power Devices, HB LEDs, and more.
Indium Phosphide (InP) Etching
InP is a compound semiconductor material of III-V group. This material has a wide band gap and a high electron mobility.
Gallium Arsenide (GaAs) Etching
GaAs is a III–V compound direct-gap semiconductor used for applications including optoelectronics and radio-frequency (RF) devices.
Atomic Layer Etching (ALE)
ALE enables atomic-scale precision for controlled material removal, ensuring uniformity and selectivity in advanced semiconductor fabrication.
SiO2 deposition
SiO2 properties include excellent abrasion resistance, good electrical insulation, low thermal expansion and high thermal stability, making it ideal for a wide range of applications.
SiNx deposition
SiNx properties include low moisture and oxygen permeation, good electrical insulation and low thermal expansion. This material is used in a variety of applications in device fabrication.
Silicon Deep Reactive Ion Etching (DRIE)
The Bosch Process enables deep silicon etching process solutions with high aspect ratio etching and excellent selectivity, ideal for MEMS and packaging applications.
Atomic Layer Deposition (ALD)
ALD delivers uniform, pinhole-free films with precise thickness control, making it ideal for high-aspect-ratio and complex device structures.
We deliver cutting-edge process equipment designed for precise film deposition, high-performance etching, and efficient surface cleaning. Our solutions cater to both R&D and production needs across diverse applications, including compound semiconductors, quantum computing, optoelectronics, MEMS, microfluidics, power devices, RF devices, and more.
