Chairman Osamu Tsuji Awarded Honorary Doctorate by Kyoto Institute of Technology
Samco Chairman Osamu Tsuji received an Honorary Doctorate from Kyoto Institute of Technology in recognition of his contributions to education…
We are Samco Inc.
Established in 1979, Samco began as a garage start-up in Kyoto, aiming to provide cutting-edge semiconductor device and electronic component manufacturing systems globally. Over time, we have evolved into a leading global corporation with state-of-the-art technological capabilities and a widespread international presence. Our commitment to growth prioritizes “thin-film technology” as our core expertise.
Atomic Layer Etching Control – Intro to ALE Systems
Introducing Samco’s Atomic Layer Etching (ALE) systems, detailing precise low-bias control and fast gas switching for uniform, low-damage etching processes.
Kyushu Institute of Technology: Professor Akiyoshi Baba
Prof. Akiyoshi Baba shares insights on CMOS/MEMS research and managing Japan’s leading open-access semiconductor facility at Kyutech’s Iizuka Campus.
University of Adelaide to Install RIE-400iP-ALE as Australia’s First ALE System
Samco’s RIE-400iP-ALE will become Australia’s first Atomic Layer Etching system, advancing III-V semiconductor and photonics research at the University of…
Invited Lecture at IIT Delhi Delivered by Samco Inc. Founder Osamu Tsuji
Invited Lecture at IIT Delhi Delivered by Samco Inc. Founder Osamu Tsuji On September 1, 2025, Samco Inc.’s Chairman and…
Samco Inc. Completes Construction of New Advanced Technology Development Center
Samco opens its new Advanced Technology Development Center in Kyoto, featuring a Class 1,000 cleanroom to drive next-gen semiconductor innovation.
TOWA and Samco Successfully Host “Kyoto Day” Technical Seminar in New Delhi
TOWA and Samco co-hosted Kyoto Day in New Delhi, sharing Japan’s semiconductor innovations to support India’s growing semiconductor industry.
TOWA and Samco to Host “Kyoto Day” in New Delhi Ahead of SEMICON India 2025
Kyoto Day in New Delhi brings TOWA and Samco together to showcase semiconductor innovations ahead of SEMICON India 2025.
Simultaneous Double-sided Wafer Deposition via Plasma Enhanced ALD
Report investigating simultaneous dual-surface deposition of AlOx films on silicon wafers using the Plasma Enhanced Atomic Layer Deposition (PEALD) technique.
Research Focused Systems
Featured Solutions
Gallium Nitride (GaN) Etching
GaN is a III-V compound semiconductor material which has wide band gap and high electron mobility. Applications include Vertical Power Devices, HB LEDs, and more.
Indium Phosphide (InP) Etching
InP is a compound semiconductor material of III-V group. This material has a wide band gap and a high electron mobility.
Gallium Arsenide (GaAs) Etching
GaAs is a III–V compound direct-gap semiconductor used for applications including optoelectronics and radio-frequency (RF) devices.
Atomic Layer Etching (ALE)
ALE enables atomic-scale precision for controlled material removal, ensuring uniformity and selectivity in advanced semiconductor fabrication.
SiO2 deposition
SiO2 properties include excellent abrasion resistance, good electrical insulation, low thermal expansion and high thermal stability, making it ideal for a wide range of applications.
SiNx deposition
SiNx properties include low moisture and oxygen permeation, good electrical insulation and low thermal expansion. This material is used in a variety of applications in device fabrication.
Silicon Deep Reactive Ion Etching (DRIE)
The Bosch Process enables deep silicon etching process solutions with high aspect ratio etching and excellent selectivity, ideal for MEMS and packaging applications.
Atomic Layer Deposition (ALD)
ALD delivers uniform, pinhole-free films with precise thickness control, making it ideal for high-aspect-ratio and complex device structures.
We deliver cutting-edge process equipment designed for precise film deposition, high-performance etching, and efficient surface cleaning. Our solutions cater to both R&D and production needs across diverse applications, including compound semiconductors, quantum computing, optoelectronics, MEMS, microfluidics, power devices, RF devices, and more.
