Fabrication of SiN_x Thin Film of Micro Dielectric Barrier Discharge Reactor for Maskless Nanoscale Etching

Qiang Li¹, Jie Liu¹, Yichuan Dai¹, Wushu Xiang¹, Man Zhang¹, Hai Wang² and Li Wen^1
1 Department of Precision Machinery and Precision Instrumentation, University of Science and Technology of China, Hefei 230027, China
² School of Mechanical and Automotive Engineering, Anhui Polytechnic University, Wuhu 241000, China

Micro dielectric barrier discharge (MDBD) devices have some potential interesting applications such as surface modification. Silicon Nitride (SiN_x) film can be used as a dielectric barrier layer material in MDBD devices. However, there are challenges of crack and wrinkle formation due to mechanical stress of SiN_x film in device fabrication. Samco plasma CVD system was used for SiN_x film deposition. With optimization of deposition process recipe, compressive stress of SiN_x film was mitigated to suppress crack formation.

For more details of our SiN_x film deposition capabilities, please visit the process data page below.
SiN_x PECVD Process