Scientific Paper on Nb-TiO₂ Dry Etching Process from Tokyo Institute of Technology

Angled etching of (001) rutile Nb–TiO₂ substrate using SF₆-based capacitively coupled plasma reactive ion etching

Akihiro Matsutani¹, Kunio Nishioka¹, Mina Sato¹, Dai Shoji¹, Daito Kobayashi², Toshihiro Isobe², Akira Nakajima², Tetsu Tatsuma³ and Sachiko Matsushita^2
1 Semiconductor and MEMS Processing Center, Tokyo Institute of Technology, Yokohama 226-8503, Japan
² Department of Metallurgy and Ceramics Science, Tokyo Institute of Technology, Meguro, Tokyo 152-8550, Japan
³ Institute of Industrial Science, The University of Tokyo, Meguro, Tokyo 153-8505, Japan
Jpn. J. Appl. Phys. (2014) 53 06JF02

Rutile Nb–TiO₂ substrates were etched using Samco Reactive Ion Etch (RIE) System. Vertical sidewalls and a smooth surface were successfully achieved.