A self-aligned gate GaN MOSFET using an ICP-assisted low-temperature Ohmic process

Qingpeng Wang^1,2, Ying Jiang^1,2, Jiaqi Zhang^1,2, Kazuya Kawaharada¹, Liuan Li¹, Dejun Wang² and Jin-Ping Ao^1
1 Institute of Technology and Science, the University of Tokushima, Tokushima 770-8506, Japan
² School of Electronic Science and Technology, Dalian University of Technology, Dalian 116023, People’s Republic of China
Semicond. Sci. Technol. (2015) 30 075003

Samco PECVD system was used for gate oxide (SiO₂) formation in GaN MOSFET fabrication.

For our process solutions of GaN power device fabrication, please visit the page below.
AlGaN/GaN Etch for GaN Power Device Fabrication/

Also, SiO₂ PECVD process data can be found in the page below.
SiO₂ PECVD Process