Scientific Paper on Field-plate Gate Fabrication from Fudan University, China

Nanofabrication of air-spaced field-plate gates with ultra-short footprint

Jinhai Shao^a, Jianpeng Liu^a, Junjie Li^a, Sichao Zhang^a, Bing-Rui Lu^a, W. Lu^b and Yifang Chen^a
a State Key Lab of ASIC and System, School of Information Science and Engineering, Fudan University, Shanghai 200433, China
^b Department of Electrical and Computer Engineering, Ohio State University, Columbus, OH 43210, USA
Microelectronic Engineering (2014) 143, 1, 11-14

Samco RIE System at Fudan University was used for SiNx plasma etching to fabricate short foot-print field-plate gates for GaN based high electron mobility transistors (HEMTs).

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AlGaN/GaN Etch for GaN Power Device Fabrication