Tensile fracture of integrated single-crystal silicon nanowire using MEMS electrostatic testing device

Toshiyuki Tsuchiya , Tetsuya Hemmi, Jun-ya Suzuki, Yoshikazu Hirai, Osamu Tabata
Department of Micro Engineerng, Kyoto University, Kyotodaigaku-Katsura C3, Nishikyo-ku, Kyoto 615-8540, Japan
Procedia Structural Integrity (2016) 2 Pages 1405–1412

Samco silicon Deep RIE system at Kyoto University was used for silicon nanowire fabrication by combination of two types of silicon etch processes (the Bosch Process) with coarse and fine scallops. Using the unique silicon plasma etching processes, silicon nanowire structures were successfully fabricated on a SOI wafer.

Kyoto University is one of Samco Deep RIE system customers for MEMS device research.
For more details of our silicon Deep RIE process technologies, please visit the process data pages below.
Silicon Deep RIE for MEMS & TSV Applications
Deep Silicon Etching Using the Bosch Process – Trench, Via Hole & Pillar Etching

Also, For more information of our silicon Deep RIE systems, please visit the product page below.
Silicon Deep RIE Systems