Scientific Paper on Silicon 3D Nanotructure Fabrication Using SAMCO DRIE System from Osaka University and Nara Institute of Science and Technology Group

January 7, 2016 January 7, 2016 Samco 2016 Customer, Samco Customer Publication, Si DRIE, Silicon/Dielectrics Etch

Creation of atomically flat Si{111}7 × 7 side-surfaces on a three-dimensionally-architected Si(110) substrate

Azusa N. Hattori^a, Ken Hattori^b, Shohei Takemoto^b, Hiroshi Daimon^b and Hidekazu Tanaka^a
^a Nanoscience and Nanotechnology Center, The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihoga-oka, Ibaraki, Osaka 567-0047, Japan
^b Graduate School of Materials Science, Nara Institute of Science and Technology, Takayama 8916-5, Ikoma, Nara 630-0192, Japan
Surface Science (2016) 644, 86–90

Samco silicon DRIE System was used for deep silicon etching to fabricate three-dimensional (3D) nanostructures.

For more details of our deep silicon etching capabilities, please visit the process data pages below.
Deep Silicon Trench/Via Hole Etching using Bosch Process
Si DRIE (Deep Reactive Ion Etching) for MEMS and TSV