Transition from a-Si:H to Si₃N₄ in thin films deposited by PECVD technology from silane diluted with nitrogen

P. Šutta¹, P. Calta¹, J. Müllerová², M. Netrvalová¹, R. Medlín¹, J. Savková¹ and V. Vavruňková^1
1 New Technologies – Research Centre, University of West Bohemia, Univerzitní 8, 306 14 Pilsen, Czech Republic
² Institute of A. Stodola, Faculty of Electrical Engineering, University of Žilina, Kpt. J. Nálepku 1390, 031 01 Lipt. Mikuláš, Slovak Republic
Presented at 2014 10th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM)

Samco PECVD System was used for the deposition of a-SiN:H thin films and a-Si:H/a-Si₃N₄ multi-layered films.

For more details of our Si₃N₄ PECVD process capabilities, please visit the page below.
Si₃N₄ PECVD Process