Pinhole electrical conductivity in polycrystalline Si on locally etched SiNy/SiOx passivating contacts for Si solar cells
C.L. Anderson a b, H.L. Guthrey b, W. Nemeth b, C.-S. Jiang b, M.R. Page b, P. Stradins a b, S. Agarwal a b
a
Department of Chemical and Biological Engineering, Colorado School of Mines, Golden, CO, 80401, USA
b
National Renewable Energy Laboratory, Golden, CO, 80401, USA
Materials Science in Semiconductor Processing, Volume 165, 2023, 107655,
ISSN 1369-8001,
https://doi.org/10.1016/j.mssp.2023.107655.
Boron-doped polycrystalline Si on locally etched silicon nitride/silicon oxide (PLENO) passivating contacts was studied for monocrystalline Si (c-Si) solar cell application. Samco open-load RIE system RIE-10NR was used for silicon etching.