Dry and wet etching for β-Ga2O3 Schottky barrier diodes with mesa termination

Hironori Okumura¹ and Taketoshi Tanaka^2
1 Faculty of Pure and Applied Science, University of Tsukuba, Tsukuba 305-8573, Japan
² Rohm Co. Ltd., Kyoto 615-8585, Japan
Japanese Journal of Applied Physics, 58, 120902 (2019)

Ga2O3 is a compound semiconductor material with a large band-gap energy. Research on this material is still early stage, but more researchers are getting interested in unique material properties.  Dry etching and wet etching of β-Ga2O3 was studied in this paper. Samco ICP-RIE system RIE-400iP was used for mesa structure fabrication in ICP etching of chlorine chemistry.

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