Dielectric Coating Thermal Stabilization During GaAs-Based Laser Fabrication for Improved Device Yield

MICHAEL K. CONNORS^1,3, JAMAL E. MILLSAPP² and GEORGE W. TURNER^1
1 Lincoln Laboratory, Massachusetts Institute of Technology, 244 Wood Street, Lexington, MA 02
420, USA.
² Toho Technology Inc., Chicago, IL 60625, USA.
Journal of Electronic Materials (2016) pp 1-7

A 300-nm thick SiO₂ film was deposited using Samco Cathode PECVD system, PD-200STP to insulate the exposed ridge sidewalls.

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Low-temperature PECVD for SiO₂ & SiN_x Deposition