Chlorine-based inductively coupled plasma etching of GaAs wafer using tripodal paraffinic triptycene as an etching resist mask

Akihiro Matsutani¹, Fumitaka Ishiwari², Yoshiaki Shoji², Takashi Kajitani², Takuya Uehara³, Masaru Nakagawa³, and Takanori Fukushima^2
1 Division of Microprocessing Technology Platform, Technical Department, Tokyo Institute of Technology, Yokohama 226-8503, Japan
² Laboratory for Chemistry and Life Science, Institute of Innovative Research, Tokyo Institute of Technology, Yokohama 226-8503, Japan
³ IMRAM, Tohoku University, Sendai 980-8577, Japan
Japanese Journal of Applied Physics (2016) Volume 55, Number 6S1

Samco ICP etch system was used for GaAs plasma etching over tripodal paraffinic triptycene (TripC₁₂) mask.
Based on chlorine gas plasma chemistry, vertical and smooth GaAs profile was achieved.

For our process capabilities of GaAs plasma etching, please visit the process data page below.
GaAs Dry Etching Process (ICP-RIE)