Fabrication of 25 μm-filter microfluidic chip on silicon substrate

Nguyen Ngan Le^1,2, Kim Khanh Huynh¹, Thi Cam Hue Phan¹, Thi My Dung Dang¹ and Mau Chien Dang^1
1 Laboratory for Nanotechnology, Vietnam National University in Ho Chi Minh City, Community 6, Linh
Trung Ward, Thu Duc District, Ho Chi Minh, Vietnam
² University of Science, Vietnam National University in Ho Chi Minh City, 227 Nguyen Van Cu Street,
District 5, Ho Chi Minh City, Vietnam
Adv. Nat. Sci.: Nanosci. Nanotechnol. 8 (2017) 015003

A microfluidic chip device was fabricated using deep silicon etching technology of the Bosch Process. Samco Deep RIE Tool RIE-200iPB was used for silicon etching over silver hard mask. With optimization of process recipe in the silicon etching, vertical silicon channel profile was fabricated.

For more details of our deep RIE process capabilities, please visit the pages below.
Silicon DRIE (Deep Reactive Ion Etching) for MEMS and TSV
Deep Silicon Trench/Via Hole/Pillar Etching using the Bosch Process

Low driving voltage Mach-Zehnder interference modulator constructed from an electro-optic polymer on ultra-thin silicon with a broadband operation

HIROMU SATO¹, HIROKI MIURA¹ FENG QIU² ANDREW M. SPRING², TSUBASA KASHINO³, TAKAMASA KIKUCHI³, MASAAKI OZAWA³, HIDEYUKI NAWATA³, KEISUKE ODOI³, SHIYOSHI YOKOYAMA^1,2
1 Department of Molecular and Material Sciences, Kyushu University, 6-1 Kasuga-koen Kasuga-city, Fukuoka 816-8580, Japan
² Institute for Materials Chemistry and Engineering, Kyushu University, 6-1 Kasuga-koen Kasuga-city, Fukuoka 816-8580, Japan
³ Nissan Chemical Industries LTD. 488-6 Suzumi-cho, Funabashi, Chiba 274-0052, Japan
Optics Express Vol. 25, Issue 2, pp. 768-775 (2017)

An electro-optic (EO) polymer waveguide using an ultra-thin silicon hybrid was fabricated. A 50 nm-thick silicon layer was deposited on SiO₂ substrates using Samco plasma CVD system, PD-220NL. Then, the silicon layer was patterned as the Mach-Zehnder interferometer using Samco deep silicon plasma etching system, RIE-400iPB.

For more details of our silicon etching process capabilities, please visit the process data page below.
Silicon Plasma Etching Data

Superior characteristics of microscale light emitting diodes through tightly lateral oxide-confined scheme

Shen-Che Huang¹, Heng Li¹ Zhe-Han Zhang¹ Hsiang Chen² Shing-Chung Wang¹ and Tien-Chang Lu^1
1 Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta-Hsueh Rd., Hsinchu 30010, Taiwan
² Department of Applied Materials and Optoelectronic Engineering, National Chi Nan University, 1 Ta-Hsueh Rd., Puli 54561, Taiwan
Appl. Phys. Lett. 110, 021108 (2017); doi: 10.1063/1.4973966

Micro-LED devices with oxide-refilled current apertures of different sizes were fabricated on sapphire substrates. Samco ICP-RIE etcher was used for aperture pattern transfer by GaN plasma etching with etching depth control.

Samco has dedicated to academic and industry customers for both research and production of LED devices by providing equipment and process technologies of plasma etching and PECVD. For more details on our process solutions for LED manufacturing, please visit the process solutions page below.
Patterned Sapphire Substrate & GaN Etch for HB LEDs

Also, our latest technical report be found here.
GaN Etching for MiniLED and MicroLED Applications

Samco SiC Power Device Seminar in Shanghai, China

Day: March 13, 2017
Venue: Fudan University Yifu Hall
Registration Fee: Free

Speakers:
● “New Materials and Different Field Technologies are Expanding the Semiconductor World” – key note speech –
Hidemi Takasu
ROHM Co., Ltd. Colleague (former managing director）& Tsinghua University Guest Professor
● “Advances in SiC Epitaxy and Devices”
Dr.Feng Zhang
Global Power Technology Co., Ltd. CTO
● “Introduction of Samco”
Jianhui Zhou
Samco Inc. Shanghai Office
● “Application Issues and Packaging for Wide Band Gap Devices”
Prof.Xu Yang
Xi’an Jiaotong University
● “Introduction of Advanced SiC Etching Process and Dry Etching System”
Chikashi Oshige
Samco Inc. R&D division
● “Nanofabrication and its Applications in Basic Scientific Study”
Prof.Yifang Chen
Fudan University

This seminar’s main theme is “Process Technology and Applications of New Generation SiC Power Devices”.
Samco provides SiC plasma etching systems and processes to industry customers for SiC trench MOSFET fabrication.
SiC Power Device Seminar Flyer (PDF) >>

If you are interested in attending this seminar, please proceed to the registration form below.
Seminar Registration Form >>

Samco MEMS Workshop 2017 in New Delhi, India

Day: March 8, 2017
Venue: Lecture Hall Complex, IIT Delhi

Speakers:

• Prof. Hiroshi Toshiyoshi, University of Tokyo, Japan
  – “MEMS for Optics, Microwave and Energy Harvester Applications”
• Prof. V. Ramgopal Rao, IIT Delhi
  – “Polymer MEMS: Opportunities and Challenges”
• Dr. Surinder Singh, Semi-Conductor Laboratory
  – “MEMS Sensors for Space Applications”
• Prof. Rudra Pratap, CeNSE, IISc
  – “Dynamic MEMS Sensors”
• Tomoyuki Nanoka, Samco Inc.
  – “Samco Si-DRIE System Introduction”

This workshop aims at providing a broad overview on MEMS & NEMS plasma applications which are fundamental techniques for nanofabrication in R&D. Samco held its first MEMS workshop at IIT Bombay in February 2016, and this is the second workshop in India.
MEMS Workshop Flyer (PDF) >>

If you are interested in attending this workshop, please proceed to the registration form below.
Workshop Registration Form >>

Samco holds a booth at MEMS 2017 conference at Las Vegas, USA.

Date : January 22 – 26, 2017
Location : Rio Las Vegas Hotel and Casino, Las Vegas, US
Booth : 5

We will show our latest updates on MEMS device processing technologies.
· Deep silicon etching (the Bosch process) for MEMS structure fabrication
· Fine and nano-scale dry etching technologies (RIE and ICP-RIE) of various materials
– silicon, SiO₂, III-V, metals, polymers and other materials
· PECVD technologies (SiO₂ and SiN_x) for hark mask fabrication
· Plasma cleaners and UV-ozone cleaners for photoresist ashing, surface cleaning and modification
· XeF₂ etching system for reliable dry release of MEMS structure

If you are interested in discussion on our process technologies and capabilities, please visit our booth (No. 5).

Go to MEMS 2017 website

Consequences of plasma oxidation and vacuum annealing on the chemical properties and electron accumulation of In₂O₃ surfaces

Theresa Berthold¹, Julius Rombach² Thomas Stauden¹ Vladimir Polyakov³
Volker Cimalla³ Stefan Krischok¹ Oliver Bierwagen² and Marcel Himmerlich^1
1 Institut fur Mikro- und Nanotechnologien MacroNano, Technische Universit€at Ilmenau, PF 100565, 98684 Ilmenau, Germany
² Paul-Drude-Institut fur Festk€orperelektronik, Hausvogteiplatz 5–7, 10117 Berlin, Germany
³ Fraunhofer-Institut fur Angewandte Festk€orperphysik, Tullastraße 72, 79108 Freiburg, Germany
Journal of Applied Physics 120, 245301 (2016)

Indium Oxide (In₂O₃) is used for metal contacts of electronic devices. It is known that defects (oxygen vacancies) and impurities (adsorbates) of In₂O₃ films change electron concentration. In previous papers, surface treatment techniques using plasma technologies were investigated to reduce the defects and impurities of In₂O₃ films.

In this paper, Samco ICP plasma etching tool at Paul-Drude-Institut was used for plasma surface oxidation of In₂O₃, and the samples were treated by subsequent vacuum annealing. It was found that oxygen plasma treatment reduced adsorbed carbon impurities and removed surface defect states, attributed to oxygen vacancies.

Hierarchically nanostructured boron-doped diamond electrode surface

Takeshi Kondo^{a, b, c}, Keita Yajima^a, Tsuyoshi Kato^a, Masahiro Okano^d, Chiaki Terashima^{b, c}, Tatsuo Aikawa^a, Masanori Hayase^{b, d}, Makoto Yuasa^{a, b, c}

^a Department of Pure and Applied Chemistry, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, Japan
^b Research Institute for Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, Japan
^c ACT-C/JST, 4-1-8 Honcho, Kawaguchi, Saitama 333-0012, Japan
^d Department of Mechanical Engineering, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, Japan
Diamond and Related Materials (2016)
A boron-doped diamond (BDD) electrode with a large specific surface area was fabricated. The combination of thermal treatment and whisker formation by diamond plasma etching was employed for nano-texturing of diamond surfaces. Samco open-load Reactive Ion Etcher, RIE-10NR was used for diamond plasma etching process.

For more details of our diamond plasma etching technologies and capabilities, please visit the process data page below.
Diamond Plasma Etching (RIE and ICP Etch)

Fabrication of SiN_x Thin Film of Micro Dielectric Barrier Discharge Reactor for Maskless Nanoscale Etching

Qiang Li¹, Jie Liu¹, Yichuan Dai¹, Wushu Xiang¹, Man Zhang¹, Hai Wang² and Li Wen^1
1 Department of Precision Machinery and Precision Instrumentation, University of Science and Technology of China, Hefei 230027, China
² School of Mechanical and Automotive Engineering, Anhui Polytechnic University, Wuhu 241000, China

Micro dielectric barrier discharge (MDBD) devices have some potential interesting applications such as surface modification. Silicon Nitride (SiN_x) film can be used as a dielectric barrier layer material in MDBD devices. However, there are challenges of crack and wrinkle formation due to mechanical stress of SiN_x film in device fabrication. Samco plasma CVD system was used for SiN_x film deposition. With optimization of deposition process recipe, compressive stress of SiN_x film was mitigated to suppress crack formation.

For more details of our SiN_x film deposition capabilities, please visit the process data page below.
SiN_x PECVD Process

Influence of top electrodes to vibration modes in impulse responses of MEMS piezoelectric diaphragms for ultrasonic microsensors

T. Nishioka, T. Nishiumi, K. Yamashita and M. Noda
Graduate School of Science and Technology, Kyoto Institute of Technology, Matsugasaki, 606-8585, Japan
2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK), Kyoto, 2016, pp. 1-2.
doi: 10.1109/IMFEDK.2016.7521705

Ultrasonic micro sensors with piezoelectric diaphragms were fabricated to investigate the relationship between vibration mode and device structure of electrode and the diaphragms. Samco Deep Reactive Ion Etching system was used for anisotropic silicon plasma etching in the Bosch Process over SiO₂ mask.

For more details of our silicon plasma etching capabilities, please visit the process data pages below.

Silicon Plasma Etching Process Data (RIE and ICP-RIE)
Silicon Deep RIE Process Data Using the Bosch Process