Investigation of the transition phases from amorphous silicon-based multilayers to silicon nanostructures by in situ X-ray diffraction

Solomon Agbo, Pavel Calta, Pavol Sutta, Veronika Vavrunkova, Marie Netrvalova and Lucie Prusakova
New Technologies Research Centre, University of West Bohemia, Pilsen, Czech Republic
physica status solidi (a) (2014) 211, 7, 1512–1518

Samco Plasma CVD System was used for deposition of multilayers comprising alternating layers of a-Si:H and SiO₂.

For more details of our SiO₂ Plasma CVD technologies, please visit the process data page below.
SiO₂ Plasma CVD Process Data

Heterogeneously integrated laser-induced fluorescence detection devices: Integration of an excitation source

Toshihiro Kamei, Keiko Sumitomo, Sachiko Ito, Ryo Takigawa, Noriyuki Tsujimura, Hisayuki Kato, Takeshi Kobayashi and Ryutaro Maeda
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8564, Japan
Japanese Journal of Applied Physics (2014) 53, 06JL02

P-doped, undoped and B-doped a-Si:H film deposition were performed using SAMCO PECVD System for microfluidic device fabrication.

Nanometer-Scale Vertical-Sidewall Reactive Ion Etching of InGaAs for 3-D III-V MOSFETs

Xin Zhao and Jesús A. del Alamo
Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, MA 02139 USA
IEEE ELECTRON DEVICE LETTERS (2014) 35, 5

Samco ICP etch system was used for fabrication of InGaAs nanowires. The nanowires showed vertical and smooth sidewalls by optimization of the etch recipe.
Massachusetts Institute of Technology (MIT) is one of the proprietary customers of Samco plasma etching systems. They use our process equipment for plasma etching of III-V materials such as GaN, GaAs and InGaAs in various device projects.

For our process capabilities of GaAs plasma etching, please visit the page below.
GaAs Dry Etching Process (ICP-RIE)

Field isolation for GaN MOSFETs on AlGaN/GaN heterostructure with boron ion implantation

Y Jiang^1,2, Q P Wang^1,2, K Tamai², L A Li², S Shinkai³, T Miyashita⁴, S-I Motoyama⁴, D J Wang^1,5, J-P Ao^2,5 and Y Ohno^2,6
1 School of Electronic Science and Technology, Dalian University of Technology, Dalian, Liaoning 116024, People’s Republic of China
² Institute of Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan
³ Center for microelectronic system, Kyushu Institute of Technology, Fukuoka 820-8502, Japan
⁴ Research and Development Department, SAMCO Inc., Kyoto 612-8443, Japan
⁵ Author to whom any correspondence should be addressed.
⁶ Present address: e-Device, Inc., Sapporo 063-0801, Japan.
Semicond. Sci. Technol. (2014) 29 055002

Samco PECVD system was used for gate oxide formation in GaN power device fabrication. This paper is collaboration work of Dalian University of Technology, The University of Tokushima, Kyushu Institute of Technology and Samco.

For our process solutions of GaN power device fabrication, please visit the page below.
AlGaN/GaN Etch for GaN Power Device Fabrication

A Widely Tunable Narrow Linewidth RF Source Integrated in a Heterogeneous Photonic Module

David W. Grund, Garrett A. Ejzak, Garrett J. Schneider, Janusz Murakowski and Dennis W. Prather
Dept. of Electr. & Comput. Eng., Univ. of Delaware, Newark, DE, USA
Journal of Lightwave Technology (2014) 32, 7, pp. 1363-1369

SAMCO ICP Etch System was used for silicon plasma etching in silicon-photonic integrated circuit fabrication.
For more details of our silicon plasma etching capabilities, please visit the page below.
Si Dry Etching Process (RIE, ICP-RIE or XeF₂ Etch)

SAMCO is constantly on the move, and is proud to announce the relocation of its U.S. East Coast regional office. Due to a rise in customers in the Northeast, the current office in North Carolina has been moved to New York, and the new office is set to open on May 15, 2014. The relocation is aimed at enhancing SAMCO’s sales presence and service capability in the region.

On March 17, 2014, SAMCO Inc. signed a distributor agreement with Valence Process Equipment, Inc. (VPE), an American manufacturer of MOCVD (Metal Organic Chemical Vapor Deposition) process equipment. The agreement terms grant SAMCO exclusive distribution rights in Japan and unexclusive distribution rights in China, South Korea, and Europe. In addition to gaining market share within Japan, as a global enterprise SAMCO is expanding its sales of dry etching and plasma CVD systems in Europe and North America.

Inductively coupled plasma reactive ion etching of GaAs wafer pieces with enhanced device yield

Michael K. Connors, Leo J. Missaggia, William S. Spencer and George W. Turner
Lincoln Laboratory, Massachusetts Institute of Technology, 244 Wood Street, Lexington, Massachusetts 02420
J. Vac. Sci. Technol. B 32, 021207 (2014)

SAMCO ICP Etching System, RIE-200iP was used for process investigation of GaAs plasma etching.

For more details of our GaAs plasma etching technologies, please visit the page below.
GaAs Dry Etching Process (ICP-RIE)

The improved piezoelectric properties of ZnO nanorods with oxygen plasma treatment on the single layer graphene coated polymer substrate

Mushtaque Hussain, Mazhar Ali Abbasi, Zafar Hussain Ibupoto, Omer Nur and Magnus Willander
Physical Electronic & Nanotechnology division, Department of Science &Technology, Campus Norrköping, Linköping University, SE-60174 Norrköping, Sweden.
physica status solidi (a) Volume 211, Issue 2, pages 455–459, February 2014

ZnO nanorods were treated with an oxygen plasma using SAMCO Plasma Etching System (RIE etcher) to reduce the defect levels.

SAMCO Inc., a leading provider of plasma etching and CVD solutions to compound semiconductor device manufacturers, announced that SAMCO has made an agreement with Büchel Holding (“Büchel”) to purchase ninety (90) percent of the issued shares of UCP Processing Ltd (“UCP”), which is the wholly-owned subsidiary of Büchel. UCP, which is located in Liechtenstein, manufactures and sells precision plasma cleaning systems for semiconductor production.