Scientific paper on phototransistor fabrication using PECVD SiO₂ by National Cheng Kung University

High Responsivity MgZnO Ultraviolet Thin-Film Phototransistor Developed Using Radio Frequency Sputtering

Jyun-Yi Li, Sheng-Po Chang *, Ming-Hung Hsu and Shoou-Jinn Chang
Department of Electrical Engineering and Advanced Optoelectronic Technology Center, Institute of Microelectronics, National Cheng Kung University, Tainan 701, Taiwan
Materials 2017, 10(2), 126

Ultraviolet phototransistors were fabricated using Mg-doped ZnO film to achieve high mobility, a fast on–off transition, and high responsivity under deep UV illumination. Samco PECVD equipment PD-220NA was used for 200 nm thick SiO₂ film deposition as a dielectric layer.

Samco offers high-speed SiO₂ and SiN_x film deposition technologies for various device applications. Also, we provide low-temperature PECVD (under 80°C) for device fabrication using heat-sensitive materials.
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High-speed SiO₂ and SiN_x Deposition
Low-temperature SiO₂ and SiN_x PECVD Process