Scientific paper on metal-oxide transistors from Chung-Ang University

Symmetrically Ion-Gated In-Plane Metal-Oxide Transistors
for Highly Sensitive and Low-Voltage Driven Bioelectronics

Jingu Kang^a), Young-Woo Jang^a), Sang Hee Moon^a), Youngjin Kang^b), Jaehyun Kim^c), Yong-Hoon Kim^b), Sung Kyu Park^a)
a) School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 06974, Korea
^b) School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Korea
^c) Department of Chemistry and Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, IL 60208, USA
Adv. Sci. 2022, 2103275. https://doi.org/10.1002/advs.202103275

Samco UV-Ozone cleaner UV-1 was used for surface treatment of aluminum to form a monolithic Al₂O₃ layer in fabrication of metal-oxide transistors with amorphous indium-gallium-zinc oxide (a-IGZO).