Process Solutions for RF Device Manufacturing
SAMCO Inc. > Markets > Process Solutions for RF Device Manufacturing
1. Epi Growth
2. Mask Fabrication for Ion Implantation
Samco’s unique cathode PECVD technology enables high-rate SiO2 deposition over 150 nm/min.
3. Hard Mask Patterning by SiO2 Etching
Unique Tornado ICP coil provides stable high-density plasma discharge for uniform SiO2 etching over 200 mm.
4. Photoresist Ashing
State-of-the-art wafer handling robot and double cassettes improve throughput of photoresist ashing process.
5. Ion Implantation
6. Hard Mask Removal
7. Recess Etching
Low damage plasma etching of GaAs layer was performed over photoresist.
Etch Selectivity : 67 (over photoresist)
GaAs Etch Rate : 102 nm/min
8. Photoresist Ashing
9. Electrode Formation
10. Passivation Deposition by PECVD
Batch processing of 6 x Ø4-inch wafers show high uniformity of SiO2 deposition.
Batch-to-batch Deposition Uniformity : ±0.2 %
Deposition Rate : 12.2 nm/min
11. Contact Hole Formation by SiO2 Etching
Double Cassettes and multi-joint robot wafer handling of Samco’s atmospheric cassette RIE systems improve throughput of SiO2 etching for contact hole formation. The systems show stable SiO2 etch uniformity around ± 1.5% over 25 x ø4”wafers.
12. Glue Wafer on Support
13. Via Hole Etching
High-power planar ICP coil enables high-rate etching of compound semiconductors including GaAs and SiC for via hole fabrication.
SiC Via Hole
Ø60 µm hole pattern
Etch Rate : 1.0 µm/min
Sample Temperature : lower than 150°C
Selectivity : 95 (over Ni mask)
Etch Depth : 89.2 µm
14. Dicing and Packaging
Small GaAs wafers can be processed in plasma scribing without chipping and clacking for higher yields.
