Planar Indium Tin Oxide Heater for Improved Thermal Distribution for Metal Oxide Micromachined Gas Sensors
M. Cihan Çakır1,2 ,Deniz Çalışkan1, Bayram Bütün1 and Ekmel Özbay1,3
1 Nanotechnology Research Center, Bilkent University, Ankara 06800, Turkey
2 Department of Nanotechnology and Nanomedicine, Hacettepe University, Ankara 06800, Turkey
3 Department of Electrical and Electronics Engineering, Department of Physics, Bilkent University, Ankara 06800, Turkey
Samco PECVD system at Bilkent University was used for Si3N4 film deposition to form an etch stop layer in Si wet etching. Furthermore, Samco ICP-RIE plasma etcher at Bilkent University was used for plasma etching of Si3N4 against Si etch mask for ITO gas sensor fabrication.
For more information on our Si3N4 PECVD process capabilities, please visit the process data page below.
Si3N4 PECVD Process Data
For more details of Samco PECVD systems and ICP-RIE systems, please visit product pages below.
Anode PECVD Systems for SiO2, Si3N4, a-Si, SiON, SiCN & DLC Deposition
Cathode PECVD Systems for High-speed SiO2 and Si3N4 Film Deposition
ICP-RIE Plasma Etcher for Si, SiO2, III-V & Metal Etching