Planar Indium Tin Oxide Heater for Improved Thermal Distribution for Metal Oxide Micromachined Gas Sensors

M. Cihan Çakır^1,2 ,Deniz Çalışkan¹, Bayram Bütün¹ and Ekmel Özbay^1,3
1 Nanotechnology Research Center, Bilkent University, Ankara 06800, Turkey
² Department of Nanotechnology and Nanomedicine, Hacettepe University, Ankara 06800, Turkey
³ Department of Electrical and Electronics Engineering, Department of Physics, Bilkent University, Ankara 06800, Turkey

Samco PECVD system at Bilkent University was used for Si₃N₄ film deposition to form an etch stop layer in Si wet etching. Furthermore, Samco ICP-RIE plasma etcher at Bilkent University was used for plasma etching of Si₃N₄ against Si etch mask for ITO gas sensor fabrication.

For more information on our Si₃N₄ PECVD process capabilities, please visit the process data page below.
Si₃N₄ PECVD Process Data

For more details of Samco PECVD systems and ICP-RIE systems, please visit product pages below.
Anode PECVD Systems for SiO₂, Si₃N₄, a-Si, SiON, SiCN & DLC Deposition
Cathode PECVD Systems for High-speed SiO₂ and Si₃N₄ Film Deposition
ICP-RIE Plasma Etcher for Si, SiO₂, III-V & Metal Etching