Nanofabrication of 10-nm T-shaped gates using a double patterning process with electron beam lithography and dry etch

Jinhai Shao¹, Jianan Deng¹, W. Lu² and Yifang Chen^1
1Fudan University (China), ²Ohio State University (United States)
J. of Micro/Nanolithography, MEMS, and MOEMS, 16(3), 033508 (2017).

T-shaped gates with the footprint scaling down to 10 nm were fabricated using a double patterning procedure (electron beam lithography and dry etching). Samco Reactive Ion Etching Tool RIE-10NR was used for pattern transfer of metal nanoslit on SiN_x layer in fluorine-based chemistry.