Formation of distinctive structures of GaN by inductively-coupled-plasma and reactive ion etching under optimized chemical etching conditions

N. Okada¹, K. Nojima¹, N. Ishibashi¹, K. Nagatoshi¹, N. Itagaki¹, R. Inomoto¹, S. Motoyama², T. Kobayashi², and K. Tadatomo^1
1Yamaguchi University, 2-16-1 Tokiwadai, Ube, Yamaguchi 755-8611, Japan
²R&D Department, SAMCO Inc., 36 Takeda Waraya-cho, Fushimi-ku, Kyoto 612-8443, Japan

Gallium Nitride (GaN) is a popular nitride material due to its unique material properties such as wide bandgap and high breakdown voltage. The material is commercially used for various applications such as LEDs , RF devices, HEMTs and LDs. In this paper, optimized conditions of GaN plasma etching was investigated in chlorine chemistry. GaN etch profile, etch rate and etch selectivity over SiN hard mask were investigated in several process conditions using Samco ICP-RIE System, RIE-230iPC. For deposition of SiN hard mask layers, Samco PECVD Tool, PD-220NL was used.

This research paper is collaboration between Yamaguchi University and Samco. We have cooperated with Yamaguchi University for process development of GaN etching and PECVD technologies to achieve technical breakthrough in nitride semiconductor based device research.

For more details of our GaN plasma etching technologies and capabilities, please visit the GaN etching process data page below.
GaN Etching using ICP-RIE