Scientific Paper on AlGaN/GaN HEMT from Tokyo Institute of Technology

Normally-off AlGaN/GaN high-electron-mobility transistor using digital etching technique

Ryota Yamanaka¹, Toru Kanazawa¹, Eiji Yagyu² and Yasuyuki Miyamoto¹
1 Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
2 Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
Japanese Journal of Applied Physics (2015) 54, 06FG04

SAMCO Reactive Ion Etching System, RIE-10NR was used for fabrication of recessed gate structure of normally-off AlGaN/GaN high-electron-mobility transistor (HEMT).
Undercut issue in recess etching was resolved with the RIE process.

For our process solutions of GaN based power device fabrication, please visit the page below.
AlGaN/GaN Etch for GaN Power Device Fabrication