Fabrication of artificial graphene in a GaAs quantum heterostructure

Diego Scarabelli, Sheng Wang, Aron Pinczuk, and Shalom J. Wind
Department of Applied Physics and Applied Mathematics, Columbia University, 500 W. 120th St., Mudd 200, MC 4701, New York, New York 10027
Yuliya Y. Kuznetsova
Department of Physics, Columbia University, 538 W. 120th St., 704 Pupin Hall MC 5255, New York, New York 10027
Loren N. Pfeiffer and Ken West
Department of Electrical Engineering, Princeton University, Olden Street, Princeton, New Jersey 08544
Geoff C. Gardner and Michael J. Manfra
Department of Physics and Astronomy, and School of Materials Engineering, and School of Electrical and Computer Engineering, Purdue University, 525 Northwestern Avenue, West Lafayette, Indiana 47907
Vittorio Pellegrini
Graphene Labs, Istituto Italiano di Tecnologia, Via Morego 30, I-16163 Genova, Italy and NEST,
Istituto Nanoscienze-CNR and Scuola Normale Superiore, Piazza San Silvestro 12, I-56127 Pisa, Italy
Journal of Vacuum Science & Technology B 33, 06FG03 (2015); doi: 10.1116/1.4932672

SAMCO ICP Etch System at Princeton University was used for anisotropic plasma etching of GaAs/AlGaAs to fabricate vertical quantum hetero-structures.

For our process capabilities of GaAs dry etching, please visit the process data page below.
GaAs Dry Etching Process (ICP-RIE)