Enhancement-mode hydrogenated diamond metal-oxide-semiconductor field-effect transistors with Y₂O₃ oxide insulator grown by electron beam evaporator

J. W. Liu¹ H. Oosato² M. Y. Liao¹ and Y. Koide^3
1 Research Center for Functional Materials, National Institute for Materials Science (NIMS), 1-1 Namiki,
Tsukuba, Ibaraki 305-0044, Japan
² Nanofabrication Platform, NIMS, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
³ Research Network and Facility Services Division, NIMS, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
APPLIED PHYSICS LETTERS 110, 203502 (2017)

Hydrogenated diamond-based MOSFET is a promising next-generation power device as well as SiC- or GaN-based devices. The device research on this material is still under development.
In this paper, H-diamond MOSFET with an Y₂O₃ oxide insulator was fabricated. Samco RIE etcher, RIE-200NL was used for mesa etching of H-diamond layer.

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