Positive onset potential and stability of Cu₂O-based photocathodes in water splitting by atomic layer deposition of a Ga₂O₃ buffer layer

Changli Li^a, Takashi Hisatomi^b, Osamu Watanabe^b, Mamiko Nakabayashi^c, Naoya Shibata^c, Kazunari Domen^b and Jean-Jacques Delaunay^a
Energy Environ. Sci., 2015, 8, 1493

Photoelectrochemical (PEC) water splitting system is a promising application for H₂ production as next-generation clean energy. To achieve stable and efficient water splitting reaction of Cu₂O-based photocathodes, Ga₂O₃ film was introduced as a buffer layer between the Cu₂O layer and the TiO₂ protective layer. Samco Plasma Etching System (RIE etcher) at the University of Tokyo was used for argon plasma treatment of Cu₂O layer to remove the residual contaminants from the annealing and change the hydrophobic surface to a hydrophilic surface.

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